Low Noise Amplifier

Description

This is a SISO, stand-alone, fully on-chip wide band LNA with integrated buffer. It incorporates feedforward noise cancelation method to eliminate the requirement of an external BALUN.

Key Features

  • Maximum power gain of 20.5 dB
  • NF of 2-2.5 dB
  • 3 dB bandwidth from 0.04 GHz to 2.2 GHz
  • Third-order intermodulation intercept point (IIP3) of −5 dBm
  • Current consumption of 25 mA (including buffer)
  • 1dBc(O/P) is 0 dBm
  • OIP3 is 12-15 dBm

  • Supply voltage 1.2V
  • Power consumed is 30mW
  • For Low Band: C1=C2= 470pF for 10 MHz to 2 GHz
  • For High Band: C1=C2= 4.4pF for 500 MHz to 3.5 GHz
  • QFN module C1=100pF C2= 10pF
  • Die Dimension: 900µm x 900µm with pads
  • CMOS 65nm technology
  • A modified DC to 2.6GHz version is also available